MMSD701 - Schottky Barrier Diode

Galaxy Microelectronics

Download the MMSD701 datasheet PDF. This datasheet also covers the MMSD301 variant, as both devices belong to the same schottky barrier diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

Extremely low minority carrier lifetime. Pb.
Very low capacitance. Lead-free.
Low reverse leakage.
Pb-Free packages are available.

📥 Download Datasheet

MMSD701 schottky barrier diode by Galaxy Microelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MMSD301-GME.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MMSD701
Manufacturer	Galaxy Microelectronics
File Size	351.52 KB
Description	Schottky Barrier Diode
Datasheet	MMSD701 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MMSD701	SCHOTTKY DIODE	AiT Components
MMSD701	SURFACE MOUNT SCHOTTKY BARRIER DIODE	WON-TOP
MMSD701	Schottky Barrier Diode	BL Galaxy Electrical
MMSD701T1	SOD-123 Schottky Barrier Diodes	Motorola
MMSD701T1	SOD-123 Schottky Barrier Diodes	ON

Other Datasheets by Galaxy Microelectronics

Part Number	Description
MMSD103	High Voltage switching Diode
MMSD301	Schottky Barrier Diode
MMSD4148	Fast Speed switching Diode
MMST2222A	Silicon Epitaxial Planar Transistor
MMST2907A	PNP Silicon Epitaxial Planar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Schottky MMSD301/MMSD701 Barrier FEATURES  Extremely low minority carrier lifetime. Pb  Very low capacitance. Lead-free  Low reverse leakage.  Pb-Free packages are available. APPLICATIONS  Schottky barrier diodes. ORDERING INFORMATION Type No. Marking MMSD301 MMSD701 XT XH Production specification Diode SOD-123 Package Code SOD-123 SOD-123 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol Value Repetitive peak reverse voltage MMSD301 MMSD701 VR 30 70 Forward Continuous Current IF 200 Power Dissipation Pd 225 Junction temperature Tj -55to +125 Storage temperature range TSTG -65 to +150 Unit V mA mW ℃ ℃ A018 Rev.A www.gmesemi.