Galaxy Century Microelectronics MMSD701
Schottky Barrier Diode
FEATURES
● Extremely low minority carrier lifetime. Pb● Very low capacitance. Lead-free
● Low reverse leakage.
● Pb-Free packages are available.
APPLICATIONS
● Schottky barrier diodes. ORDERING INFORMATION Type No. Marking MMSD301 MMSD701 XT XH Production specification Diode SOD-123 Package Code SOD-123 SOD-123 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol Value Repetitive peak reverse voltage MMSD301 MMSD701 VR 30 70 Forward Continuous Current IF 200 Power Dissipation Pd 225 Junction temperature Tj -55to +125 Storage temperature range TSTG -65 to +150 Unit V mA mW ℃ ℃ A018 Rev.A 1 Schottky MMSD301/MMSD701 Barrier Production specification DiodeELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage MMSD301 MMSD701 V(BR)R 30 70 V IR=10μA Forward Voltage Rever