Galaxy Century Microelectronics MMST2222A
Silicon Epitaxial Planar Transistor
| Part No. | MMST2222A |
|---|---|
| Datasheet | MMST2222A Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● Epitaxial planar die construction.● Complements the MMST2907A.
● Ultra-small surface mount package. Pb Lead-free MMST2222A
APPLICATIONS
● NPN Silicon Epitaxial Planar Transistor. ORDERING INFORMATION Type No. Marking MMST2222A K3P SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 75 Units V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6V IC Collector Current -Continuous 600 mA PC Collector Dissipation 200 mW RθJA Thermal resistance, junction to ambient 625 ℃/W Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ F006 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor MMST2222AELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP Collector-base breakdown voltage V(BR)CBO
