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MMST2222A - Silicon Epitaxial Planar Transistor

Key Features

  • Epitaxial planar die construction.
  • Complements the MMST2907A.
  • Ultra-small surface mount package. Pb Lead-free MMST2222A.

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Production specification Silicon Epitaxial Planar Transistor FEATURES  Epitaxial planar die construction.  Complements the MMST2907A.  Ultra-small surface mount package. Pb Lead-free MMST2222A APPLICATIONS  NPN Silicon Epitaxial Planar Transistor. ORDERING INFORMATION Type No. Marking MMST2222A K3P SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 75 Units V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6V IC Collector Current -Continuous 600 mA PC Collector Dissipation 200 mW RθJA Thermal resistance, junction to ambient 625 ℃/W Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ F006 Rev.A www.gmesemi.