Galaxy Century Microelectronics MMST2907A
PNP Silicon Epitaxial Planar Transistor
| Part No. | MMST2907A |
|---|---|
| Datasheet | MMST2907A Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | PNP Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● Power dissipation.(PC=200mW) Pb● Epitaxial planar die construction. Lead-free
● Complementary NPN type MMST2222A.
APPLICATIONS
● General purpose application. Production specification MMST2907A ORDERING INFORMATION Type No. Marking MMST2907A K3F SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -600 PC Collector Dissipation 200 RθJA Thermal Resistance,Junction to Ambient 625 Units V V V mA mW ℃/W Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ F050 Rev.A 1 Production specification PNP Silicon Epitaxial Planar Transistor MMST2907AELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage
