Galaxy Century Microelectronics MMST3906
PNP Silicon Epitaxial Planar Transistor
| Part No. | MMST3906 |
|---|---|
| Datasheet | MMST3906 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | PNP Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● Power dissipation.● Epitaxial planar die construction.
● Complementary to MMST3904.
● Also available in lead free version. Pb Lead-free MMST3906
APPLICATIONS
● General purpose application and switching application. ORDERING INFORMATION Type No. Marking MMST3906 K5N SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -40 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -200 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F052 Rev.A 1 Production specification PNP Silicon Epitaxial Planar Transistor MMST3906ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO
