RB520L-30 - Schottky Barrier Diode

Galaxy Microelectronics

Key Features

Low IR=0.1μA.
High reliability.
Small surface mounting. Pb Lead-free Production specification RB520L-30.

RB520L-30 schottky barrier diode by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	RB520L-30
Manufacturer	Galaxy Microelectronics
File Size	173.86 KB
Description	Schottky Barrier Diode
Datasheet	RB520L-30 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
RB520AS-30	Schottky Barrier Diode	ROHM
RB520CM-60	Schottky Barrier Diode	Rohm
RB520CS-30	SCHOTTKY BARRIER DIODE	JCET
RB520CS-30	Schottky barrier diode	Rohm
RB520CS3002L	VF MEGA Schottky barrier rectifier	nexperia

Other Datasheets by Galaxy Microelectronics

Part Number	Description
RB520S-30	Schottky Barrier Diode
RB521L-30	Schottky Barrier Diode
RB521S-30	Schottky Barrier Diode
RB500V-40	Schottky Barrier Diode
RB501V-40	Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Schottky Barrier Diode FEATURES  Low IR=0.1μA.  High reliability.  Small surface mounting. Pb Lead-free Production specification RB520L-30 APPLICATIONS  Low current rectification. ORDERING INFORMATION Type No. Marking RB520L-30 B DFN1006-2 Package Code DFN1006-2 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits DC reverse voltage Mean rectifying current Peak forward surge current Total device dissipation Junction temperature storage temperature VR 30 IO 200 IFSM 1 PT 200 Tj +125 Tstg -40 to +125 Unit V mA A mW ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage Reverse current VF IR 0.6 V IF=200mA 1 μA VR=10V 016 Rev.A www.gmesemi.