Galaxy Century Microelectronics S9014W
Silicon Epitaxial Planar Transistor
| Part No. | S9014W |
|---|---|
| Datasheet | S9014W Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
z Complementary To S9015W. z Excellent HFE Linearity. z Power dissipation.(PC=0.2W) Pb Lead-freeAPPLICATIONS
z Per-Amplifier low level & low noise. ORDERING INFORMATION Type No. Marking S9014W J6 Production specification S9014W SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 100 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F059 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor S9014WELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 45 V
