SM5821 Datasheet | Galaxy Microelectronics

FEATURES - Metal silicon junction, majority carrier conduction - High surge capability Pb Lead-free - Low power loss, high efficiency - Epitaxial construction - For use in low voltage high frequency inverters, free Wheeling and polarity protection applications - The plastic material carries U/L recognition 94V-0 MECHANICAL DATA - Case: JEDEC SMC, molded plastic over1passivated chip - Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 - Polarity: Color band denotes cathode end - Weight: 0.007 ounces, 0.21 gram - Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified SM5820 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average for word rectified current at @TL=90℃ Peak forward surge current 8.3ms single half-sine-wave @TJ=125℃ Maximum instantaneous forward voltage at3.0A(NOTE1) Maximum DC reverse current @TA=25℃ at rated DC blocking voltage @TA=100℃ Typical thermal resistance (NOTE2) Operating temperature range Storage temperature range NOTE: 1.Pulse test:300μS pulse width,1%duty cycle 2. Thermal resistance junction to ambient VRRM VRWS VDC IF(AV) IFSM RθJA TJ TSTG 20 14 20 30 21 30 3.0 2.0 20.0 20 -55--- +125 -55--- +125 SM5822 40 28 40 UNITS V V V...