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TBL4P06B-6L - P-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

  • High density cell design for ultra low RDS(ON).
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation.
  • Halogen free.
  • Qualified to AEC-Q101 standards for high reliability Typical.

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Datasheet Details

Part number TBL4P06B-6L
Manufacturer GME
File Size 529.56 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet TBL4P06B-6L Datasheet
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Full PDF Text Transcription

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P-Channel Enhancement Mode MOSFET TBL4P06B-6L Features  High density cell design for ultra low RDS(ON)  Fully characterized avalanche voltage and current  Excellent package for good heat dissipation  Halogen free  Qualified to AEC-Q101 standards for high reliability Typical Applications  Power switching application  Hard switched and high frequency circuits  Uninterruptible power supply Mechanical Data  Case: SOT-23-6L  Molding Compound, UL Flammability Classification Rating 94V-0  Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208 SOT-23-6L Ordering Information Part Number TBL4P06B-6L Package SOT-23-6L Shipping 3000pcs / Tape & Reel Marking Code 4P06B Maximum Ratings (@TA=25℃ unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS
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