Galaxy Century Microelectronics TBL900P06D
P-Channel Enhancement Mode MOSFET
| Part No. | TBL900P06D |
|---|---|
| Datasheet | TBL900P06D Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
● Super low gate charge● Excellent CdV/dt effect decline
● Advanced high cell density Trench technology
● Halogen free
● Qualified to AEC-Q101 standards for high reliability
MECHANICAL DATA
● Case: TO-252● Molding Compound: UL Flammability Classification Rating 94V-0
● Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-252 Ordering Information Part Number TBL900P06D Package TO-252 Shipping Quantity 80 pcs / Tube or 2500 pcs / Tape & Reel Marking Code 900P06D
MAXIMUM RATINGS
(@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Pulsed Drain Current Symbol VDSS VGSS ID IDM Value -60 ±20 -18 -64 Unit V V A A Thermal Characteristics Parameter Power Dissipation (TC = 25°C) Thermal Resistance Junction-to-Case *1 Operating Junction Temperature Range Storage Temperature Range Symbol PD RθJC TJ TSTG Value 57 2.2 -55 ~ +150 -55 ~ +150 Unit W °C/W °C °C MTM0703A: September 2020 1 P-Channel...
