Galaxy Century Microelectronics TBL950P10D
P-Channel Enhancement Mode MOSFET
| Part No. | TBL950P10D |
|---|---|
| Datasheet | TBL950P10D Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
● Super low gate charge● 100% EAS guaranteed
● Excellent CdV/dt effect decline
● Advanced high cell density Trench technology
● Halogen free
● Qualified to AEC-Q101 standards for high reliability
MECHANICAL DATA
● Case: TO-252● Molding Compound: UL Flammability Classification Rating 94V-0
● Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-252 Ordering Information Part Number TBL950P10D Package TO-252 Shipping Quantity 80 pcs / Tube or 2500 pcs / Tape & Reel Marking Code 950P10D
MAXIMUM RATINGS
(@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) *1 Continuous Drain Current (TC = 100°C) *1 Pulsed Drain Current *2 Single Pulse Avalanche Energy *3 Symbol VDSS VGSS ID IDM EAS Value -100 ±20 -30 -21 -52 110 Unit V V A A A mJ Thermal Characteristics Parameter Power Dissipation (TC = 25°C) Thermal Resistance Junction-to-Case Operating Junction Temperature Range Storage T...
