• Part: TBSS123W
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 567.39 KB
Download TBSS123W Datasheet PDF
Galaxy Microelectronics
TBSS123W
Features - Low on-resistance - High-speed switching - HBM: AEC-Q101-001: H2 (JESD22-A114-B: 2) - Ro HS pliant with Halogen-free - Qualified to AEC-Q101 Standards Mechanical Data - Case: SOT-23, SOT-323, SOT-23-3L - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202, Method 208 TBSS123 SOT-23 TBSS123-3L SOT-23-3L TBSS123W SOT-323 Ordering Information Part Number TBSS123 TBSS123W TBSS123-3L Package SOT-23 SOT-323 SOT-23-3L Shipping Quantity 3000 pcs / Tape & Reel 3000 pcs / Tape & Reel 3000 pcs / Tape & Reel Maximum Ratings (@ TA = 25°C unless otherwise specified) Marking Code B123 B123 B123 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TA = 25°C) - 1 Continuous Drain Current (TA = 70°C) - 1 Pulsed Drain Current (tp =10μs, TA = 25°C) Single Pulse Avalanche Energy - 3 Power Dissipation (TA = 25°C, SOT-23,SOT-23-3L) - 1 Power Dissipation (TA = 25°C, SOT-323) - 1 Operating...