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TGSC2D20120B Datasheet

Manufacturer: Galaxy Microelectronics
TGSC2D20120B datasheet preview

Datasheet Details

Part number TGSC2D20120B
Datasheet TGSC2D20120B-GME.pdf
File Size 284.88 KB
Manufacturer Galaxy Microelectronics
Description SiC Schottky Barrier Diode
TGSC2D20120B page 2 TGSC2D20120B page 3

TGSC2D20120B Overview

Features  Low conduction loss due to low VF  Extremely low switching loss by tiny QC  Highly rugged due to better surge current  Industrial standard quality and reliability  RoHS pliant with Halogen-free  Qualified to AEC-Q101 Standards Applications  UPS  Power Inverter  High performance SMPS  Power factor correction  Case: UL flammability classification rating 94V-0  Terminals: June 2025 [2.0] .gmesemi.

TGSC2D20120B Key Features

  • Low conduction loss due to low VF
  • Extremely low switching loss by tiny QC
  • Highly rugged due to better surge current
  • Industrial standard quality and reliability
  • RoHS pliant with Halogen-free
  • Qualified to AEC-Q101 Standards
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