TGSC2D20120B Key Features
- Low conduction loss due to low VF
- Extremely low switching loss by tiny QC
- Highly rugged due to better surge current
- Industrial standard quality and reliability
- RoHS pliant with Halogen-free
- Qualified to AEC-Q101 Standards
- Part: TGSC2D20120B
- Description: SiC Schottky Barrier Diode
- Manufacturer: Galaxy Microelectronics
- Size: 284.88 KB
