Galaxy Century Microelectronics TIP122
NPN Epitaxial Silicon Darlington Transistor
| Part No. | TIP122 |
|---|---|
| Datasheet | TIP122 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Epitaxial Silicon Darlington Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Complementary to TIP127.● MSL 3 Pb Lead-free Production specification TIP122 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ TC=25℃ 100 V 5V 5 A 8 120 mA 2 65 -65 to +150 W ℃ X023 Rev.A 1 Production specification Medium Power Linear Switching
APPLICATIONS
TIP122ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter Sustaining Voltage VCEO(SUS) IC=100mA,IB=0 100 V Collector Cut-off Current ICEO VCE=50V,IB=0 0.5 mA Collector Cut-off Current ICBO VCB=100V, IE=0 0.2 mA Emitter Cut-off Current
