Galaxy Century Microelectronics TIP127
PNP Epitaxial Silicon Darlington Transistor
| Part No. | TIP127 |
|---|---|
| Datasheet | TIP127 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | PNP Epitaxial Silicon Darlington Transistor |
| Buy | Stock & Price |
APPLICATIONS
TIP127FEATURES
● Complementary to TIP122. Pb Lead-free TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ Tc=25℃ -100 V -5 V -5 A -8 -120 mA 2 65 -65 to +150 W ℃ X022 Rev.A 1 Production specification Medium Power Linear SwitchingAPPLICATIONS
TIP127ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter Sustaining Voltage VCEO(SUS) IC=-100mA,IB=0 -120 V Collector Cut-off Current ICEO VCE=-50V,IB=0 -2 mA Collector Cut-off Current ICBO VCE=-100V, VEB=0 -1 mA Emitter Cut-off Cur
