Galaxy Century Microelectronics TIP31A
Epitaxial Planar NPN Transistor
FEATURES
● Complementary to TIP32/32A/32B/32C. Pb Lead-free Production specification TIP31/31A/31B/31C TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-Emitter Voltage TIP31 TIP31A TIP31B TIP31C TIP31 TIP31A TIP31B TIP31C Value 40 60 80 100 40 60 80 100 Unit V V VEBO Emitter-Base Voltage 5V Collector Current IC DC Pulse 3 5 A IB Base Crrent 1A PC Collector Dissipation Ta=25℃ 2 W Tj,Tstg Junction and Storage Temperature -65 to +150 ℃ X050 Rev.A 1 Production specification Epitaxial Planar NPN Transistor TIP31/31A/31B/31CELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test conditions MIN TYP Collector-emitter Sustaining Voltage TIP31 TIP31A TIP31B TIP31C Collector Cut-off Current TIP31/31A TIP31B/31C Collector Cut-off Current TIP31 TIP31A TIP