TIP31C - Epitaxial Planar NPN Transistor

Galaxy Microelectronics

Download the TIP31C datasheet PDF. This datasheet also covers the TIP31 variant, as both devices belong to the same epitaxial planar npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Complementary to TIP32/32A/32B/32C. Pb Lead-free Production specification TIP31/31A/31B/31C TO-220AB.

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TIP31C epitaxial planar npn transistor by Galaxy Microelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (TIP31-GME.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	TIP31C
Manufacturer	Galaxy Microelectronics
File Size	209.38 KB
Description	Epitaxial Planar NPN Transistor
Datasheet	TIP31C Datasheet

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Other Datasheets by Galaxy Microelectronics

Part Number	Description
TIP31	Epitaxial Planar NPN Transistor
TIP31A	Epitaxial Planar NPN Transistor
TIP31B	Epitaxial Planar NPN Transistor
TIP32	Epitaxial Planar PNP Transistor
TIP32A	Epitaxial Planar PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Epitaxial Planar NPN Transistor FEATURES  Complementary to TIP32/32A/32B/32C. Pb Lead-free Production specification TIP31/31A/31B/31C TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-Emitter Voltage TIP31 TIP31A TIP31B TIP31C TIP31 TIP31A TIP31B TIP31C Value 40 60 80 100 40 60 80 100 Unit V V VEBO Emitter-Base Voltage 5V Collector Current IC DC Pulse 3 5 A IB Base Crrent 1A PC Collector Dissipation Ta=25℃ 2 W Tj,Tstg Junction and Storage Temperature -65 to +150 ℃ X050 Rev.A www.gmesemi.com 1 Production specification Epitaxial Planar NPN Transistor TIP31/31A/31B/31C ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.