Galaxy Century Microelectronics TIP41C
Epitaxial Planar NPN Transistor
| Part No. | TIP41C |
|---|---|
| Datasheet | TIP41C Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Epitaxial Planar NPN Transistor |
| Buy | Stock & Price |
FEATURES
z Complementary to TIP42C. Pb Lead-free Production specification TIP41C TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Crrent DC Pulse Collector Dissipation Junction and Storage Temperature Ta=25℃ 100 V 5V 6 A 10 2A 2W -55 to +150 ℃ X018 Rev.A 1 Production specification Epitaxial Planar NPN Transistor TIP41CELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current VCEO(SUS) ICEO ICES IEBO IC=30mA,IB=0 VCE=60V,IB=0 VCE=100V, VEB=0 VEB=5V,IC=0 100 DC Current Gain hFE Collector-emitter Saturation Voltage
