100P03 Overview
Note b：Pulse width limited by max. Note c：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC). TEL：0755-29961262 FAX：0755-29961466 Page 2 GOFORD 100P03 (TA = 25°C Unless Otherwise Noted) Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON) d...
100P03 Key Features
- 30V 3.1mΩ
- Super High Dense Cell Design
- Reliable and Rugged
- Lead Free and Green Devices Available
- HBM ESD Capability level of 6.6KV typical