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100P03 - MOSFET

Description

DDDD S S SG DFN5x6-8 ( 5,6,7,8 ) D D DD (4) G SSS (1, 2, 3) P-Channel MOSFET Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ TST G IS Maximum Junction Temperature

Features

  • VDSS RDS(ON) RDS(ON) ID @ -4.5V(Typ) @ -10V(Typ) -30V 3.1mΩ 2.2mΩ -100A.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).
  • HBM ESD Capability level of 6.6KV typical Note : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

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Datasheet Details

Part number 100P03
Manufacturer GOFORD
File Size 3.09 MB
Description MOSFET
Datasheet download datasheet 100P03 Datasheet
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    GOFORD 100P03 Features · VDSS RDS(ON) RDS(ON) ID @ -4.5V(Typ) @ -10V(Typ) -30V 3.1mΩ 2.2mΩ -100A · Super High Dense Cell Design · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) · HBM ESD Capability level of 6.6KV typical Note : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. Applications · Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.
    Published: |