Datasheet Details
| Part number | 100P03 |
|---|---|
| Manufacturer | GOFORD |
| File Size | 3.09 MB |
| Description | MOSFET |
| Download | 100P03 Download (PDF) |
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|
| Part number | 100P03 |
|---|---|
| Manufacturer | GOFORD |
| File Size | 3.09 MB |
| Description | MOSFET |
| Download | 100P03 Download (PDF) |
|
|
|
DDDD S S SG DFN5x6-8 ( 5,6,7,8 ) D D DD (4) G SSS (1, 2, 3) P-Channel MOSFET Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ TST G IS Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current ID Continuous Drain Current IDM Pulsed Drain Current TC=25°C TC=25°C TC=100°C TC=25°C Rating -30 ±20 150 -55 to 150 -100 a -100a -100a -400b Unit V °C A HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 1 GOFORD 100P03 PD RqJC ID PD Rq JA IAS c EAS c Maximum Power Dissipation Thermal Resistance-Junction to Case Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient Avalanche Current, Single pulse (L=0.5mH) Avalanche Energy, Single pulse (L=0.5mH) TC=25°C TC=100°C Steady State TA=25°C TA=70°C TA=25°C TA=70°C t £ 10s Steady State 125 50 1 -41.8 -33.5 7.4 4.7 17 55 41 420 W °C/W A W °C/W A mJ Note a：Package is limited to 100A.
Note b：Pulse width limited by max.
junction temperature.
GOFORD 100P03.
| Part Number | Description |
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