• Part: 2002A
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: GOFORD
  • Size: 890.39 KB
Download 2002A Datasheet PDF
GOFORD
2002A
Description The G2002A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 200V 2A < 540mΩ < 560mΩ l 100% Avalanche Tested l Ro HS pliant Schematic diagram Application l Power switch l DC/DC converters SOT-23-6L Ordering Information Device G2002A Package SOT-23-6L Marking 2002A Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Operating Junction and Storage Temperature Range (note1) VDS ID IDM VGS PD TJ, Tstg Thermal Resistance Parameter Symbol Thermal Resistance, Junction-to-Ambient Rth JA .gofordsemi. TEL:0755-29961263 Packaging 3000pcs/Reel Value Unit ±20 -55 To 150 ºC Value 50 Unit ºC/W FAX:0755-29961466(A0601) G2002A Spe...