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21N06 - MOSFET

Datasheet Summary

Description

The 21N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDSS R DS(ON) ID @ 10V (typ) 60V 24 m Ω 21 A.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet preview – 21N06

Datasheet Details

Part number 21N06
Manufacturer GOFORD
File Size 1.39 MB
Description MOSFET
Datasheet download datasheet 21N06 Datasheet
Additional preview pages of the 21N06 datasheet.

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    GOFORD DESCRIPTION The 21N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
    Published: |