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21N06 Datasheet MOSFET

Manufacturer: GOFORD

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Datasheet Details

Part number 21N06
Manufacturer GOFORD
File Size 1.39 MB
Description MOSFET
Download 21N06 Download (PDF)

General Description

The 21N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

GENERAL

Overview

GOFORD.

Key Features

  • VDSS R DS(ON) ID @ 10V (typ) 60V 24 m Ω 21 A.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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