3415A - N-Channel MOSFET

General Description

The 3415 A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protected.

Key Features

VDSS RDS(ON) RDS(ON) ID @ -4.5V(Typ) @-2.5V(Typ) -20V 37 mΩ 50 mΩ -4.6A.
High Power and current handing capability.
RoHS Compliant.
Surface mount package.
ESD (HBM)>7.0KV.

📥 Download Datasheet

3415A n-channel mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	3415A
Manufacturer	GOFORD
File Size	1.05 MB
Description	N-Channel MOSFET
Datasheet	3415A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
3410	Linear Low Density Polyethylene	TAISOX
3410A	(3410xA) Three Phase Bridge	VMI
3410B	(3410xB) Three Phase Bridge	VMI
3410FA	(3410xA) Three Phase Bridge	VMI
3410FB	(3410xB) Three Phase Bridge	VMI

Other Datasheets by GOFORD

Part Number	Description
3415	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

GOFORD Description The 3415 A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protected. General Features ● VDSS RDS(ON) RDS(ON) ID @ -4.5V(Typ) @-2.5V(Typ) -20V 37 mΩ 50 mΩ -4.6A ● High Power and current handing capability ● RoHS Compliant ● Surface mount package ● ESD (HBM)>7.