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4402 - N-Channel MOSFET

General Description

The 4402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDSS RDS(ON) RDS(ON) ID @ 4.5V(Typ) @2.5V(Typ) 20V 6.8mΩ 8 mΩ 30A.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet Details

Part number 4402
Manufacturer GOFORD
File Size 1.36 MB
Description N-Channel MOSFET
Datasheet download datasheet 4402 Datasheet

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Full PDF Text Transcription (Reference)

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GOFORD Description The 4402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDSS RDS(ON) RDS(ON) ID @ 4.5V(Typ) @2.5V(Typ) 20V 6.