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45P04 - MOSFET

Description

The 45P40 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Features

  • VDSS RDS(ON) ID @ -10V(typ) -40V 9 mΩ -50A.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet preview – 45P04

Datasheet Details

Part number 45P04
Manufacturer GOFORD
File Size 1.46 MB
Description MOSFET
Datasheet download datasheet 45P04 Datasheet
Additional preview pages of the 45P04 datasheet.

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Full PDF Text Transcription

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GOFORD 45P04 Description The 45P40 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
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