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G01N20 Datasheet

Manufacturer: GOFORD

This datasheet includes multiple variants, all published together in a single manufacturer document.

G01N20 datasheet preview

Datasheet Details

Part number G01N20
Datasheet G01N20 G01N20LE Datasheet (PDF)
File Size 550.07 KB
Manufacturer GOFORD
Description N-Channel MOSFET
G01N20 page 2 G01N20 page 3

G01N20 Overview

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

G01N20 Key Features

  • ID (at VGS = 10V)
  • RDS(ON) (at VGS = 10V)
  • RDS(ON) (at VGS = 4.5V)
  • 100% Avalanche Tested
  • RoHS pliant
  • ESD (HBM)>5.0KV
  • Power switch
  • DC/DC converters

More Datasheets from GOFORD

See all GOFORD datasheets

Part Number Description
G01N20LE N-Channel MOSFET

G01N20 Distributor

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