G01N20 - N-Channel MOSFET

Download the G01N20 datasheet PDF. This datasheet also covers the G01N20LE variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
100% Avalanche Tested.
RoHS Compliant.
ESD (HBM)>5.0KV 200V 1.7A < 0.85Ω < 0.9Ω Schematic diagram G01N20 Marking and pin assignment.

📥 Download Datasheet

G01N20 n-channel mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G01N20LE-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G01N20
Manufacturer	GOFORD
File Size	550.07 KB
Description	N-Channel MOSFET
Datasheet	G01N20 Datasheet

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Other Datasheets by GOFORD

Part Number	Description
G01N20LE	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

GOFORD G01N20LE N-Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.5V) ⚫ 100% Avalanche Tested ⚫ RoHS Compliant ⚫ ESD (HBM)>5.0KV 200V 1.7A < 0.85Ω < 0.