G01N20
Description
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
- VDS
- ID (at VGS = 10V)
- RDS(ON) (at VGS = 10V)
- RDS(ON) (at VGS = 4.5V)
- 100% Avalanche Tested
- Ro HS pliant
- ESD (HBM)>5.0KV
200V 1.7A < 0.85Ω
< 0.9Ω
Schematic diagram G01N20
Marking and pin assignment
Application
- Power switch
- DC/DC converters
Device G01N20LE
Package SOT-23-3L
Marking G01N20
SOT-23-3L Packaging 3000pcs/Reel
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Operating Junction and Storage Temperature Range
(note1)
VDS ID IDM VGS PD TJ, Tstg
±20
-55 To 150
ºC
Thermal Resistance
Parameter Thermal Resistance, Junction-to-Ambi...
