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G07P04S Datasheet PDF

GOFORD G07P04S

The G07P04S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
Part No. G07P04S
Datasheet G07P04S Download
Manufacturer GOFORD
Description P-Channel Enhancement Mode Power MOSFET
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G07P04S datasheet page 1 preview

DESCRIPTION

It can be used in a wide variety of applications.

GENERAL FEATURES

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -40V -7A < 18mΩ < 22mΩ Schematic diagram Application l Power switch l DC/DC converters pin assignment Ordering Information Device G07P04S Package SOP-8 Marking G07P04

ABSOLUTE MAXIMUM RATINGS

TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Operating Junction and Storage Temperature Range (note1) VDS ID IDM VGS PD TJ, Tstg Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient Symbol RthJA TEL:0755-29961263 SOP-8 Packaging 4000pcs/Reel Value Unit -40 V -7 A -28 A ±20 V 2.5 W -55 To 150 ºC Value 50 Unit ºC/W FAX:0755-29961466(A1300) G07P04S Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Static Parameters Drain-Source Breakdown Voltage Ze...
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