G110N06 - MOSFET

General Description

The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.

Key Features

VDSS RDS(ON) ID @ 10V(Typ) 55V 5.2 mΩ 110A.
Ultra Low On-Resistance.
High UIS and UIS 100% Test.

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G110N06 mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	G110N06
Manufacturer	GOFORD
File Size	1.54 MB
Description	MOSFET
Datasheet	G110N06 Datasheet

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GOFORD General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications. Features ● VDSS RDS(ON) ID @ 10V(Typ) 55V 5.2 mΩ 110A ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply G110N06 Schematic diagram Marking and pin assignment Table 1.