G110N06
Description
The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.
Key Features
- VDSS RDS(ON) ID @ 10V(Typ) 55V 5.2 mΩ 110A
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
