G110N06 Overview
The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.
G110N06 Key Features
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply