G120N03D3 - N-Channel Enhancement Mode Power MOSFET

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 28A < 10mΩ < 15mΩ l 100% Avalanche Tested l RoHS Compliant.

📥 Download Datasheet

G120N03D3 n-channel enhancement mode power mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	G120N03D3
Manufacturer	GOFORD
File Size	712.64 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G120N03D3 Datasheet

Other Datasheets by GOFORD

Part Number	Description
G120N03	N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

G120N03D3 N-Channel Enhancement Mode Power MOSFET Description The G120N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.