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G120N03D3 - N-Channel Enhancement Mode Power MOSFET

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 28A < 10mΩ < 15mΩ l 100% Avalanche Tested l RoHS Compliant.

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Datasheet preview – G120N03D3

Datasheet Details

Part number G120N03D3
Manufacturer GOFORD
File Size 712.64 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G120N03D3 Datasheet
Additional preview pages of the G120N03D3 datasheet.

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Full PDF Text Transcription

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G120N03D3 N-Channel Enhancement Mode Power MOSFET Description The G120N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.
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