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G160N04 - N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the G160N04, a member of the G160N04K N-Channel Enhancement Mode Power MOSFET family.

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avalanche Tested l RoHS Compliant 40V 25A < 15mΩ < 19mΩ Schematic diagram.

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Datasheet preview – G160N04

Datasheet Details

Part number G160N04
Manufacturer GOFORD
File Size 706.90 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G160N04 Datasheet
Additional preview pages of the G160N04 datasheet.

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Full PDF Text Transcription

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G160N04K N-Channel Enhancement Mode Power MOSFET Description The G160N04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.
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