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G16P03 - MOSFET

Description

The G16P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge .

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDSS RDS(ON) @-10V (typ) -30V 10.6 mΩ RDS(ON) ID @-4.5V (typ) 16.3 mΩ -16A.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet preview – G16P03

Datasheet Details

Part number G16P03
Manufacturer GOFORD
File Size 1.07 MB
Description MOSFET
Datasheet download datasheet G16P03 Datasheet
Additional preview pages of the G16P03 datasheet.

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Full PDF Text Transcription

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GOFORD G16P03 Description The G16P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features VDSS RDS(ON) @-10V (typ) -30V 10.6 mΩ RDS(ON) ID @-4.5V (typ) 16.
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