G18NP06Y Key Features
- ID (at VGS = 10V)
- RDS(ON) (at VGS = 10V)
- RDS(ON) (at VGS = 4.5V)
- ID (at VGS = -10V)
- RDS(ON) (at VGS = -10V)
- RoHS pliant
- 60V -18A < 45mΩ
- Power switch
- DC/DC converters
- Part: G18NP06Y
- Manufacturer: GOFORD
- Size: 899.93 KB
Related GOFORD Datasheets
| Part Number | Description |
|---|---|
| G18N50 | N-Channel Enhancement Mode Power MOSFET |
| G18N50T | N-Channel Enhancement Mode Power MOSFET |
| G18P03 | P-Channel Trench Power MOSFET |
| G18P03D3 | P-Channel Trench MOSFET |
| G18P03S | P-Channel Trench Power MOSFET |
G18NP06Y Description
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.