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G18NP06Y - N and P Channel Enhancement Mode Power MOSFET

General Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

  • NMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V) 60V 18A < 35mΩ < 45mΩ Schematic diagram D1/D2.
  • PMOS.
  • VDS.
  • ID (at VGS = -10V).
  • RDS(ON) (at VGS = -10V).
  • RoHS Compliant -60V -18A < 45mΩ S1 G1 S2 G2 Marking and pin assignment.

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Datasheet Details

Part number G18NP06Y
Manufacturer GOFORD
File Size 899.93 KB
Description N and P Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G18NP06Y Datasheet

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Full PDF Text Transcription (Reference)

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G18NP06Y N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ⚫ NMOS ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.