GOFORD G2003A
The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | G2003A |
|---|---|
| Datasheet | G2003A Download |
| Manufacturer | GOFORD |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications.GENERAL FEATURES
● VDS = 190V,ID =3A RDS(ON) < 540mΩ @ VGS=10V RDS(ON) < 560mΩ @ VGS=10V (Typ:430mΩ) (Typ:440mΩ)● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
● RoHS Compliant Schematic Diagram Marking and Pin Assignment Application
● Power switching application Ordering Information Part Number G2003A Marking G2003A Case SOT-23-3L SOT-23-3L Packaging 3000pcs/Reel
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 190 ±20 3 8 1.8 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJAELECTRICAL CHARACTERISTICS
(TA=25℃unless otherwise noted) Parameter Symbol Co...
