Datasheet4U Logo Datasheet4U.com

G2003A Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Overview: GOFORD G2003A.

Datasheet Details

Part number G2003A
Manufacturer GOFORD
File Size 1.23 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet G2003A-GOFORD.pdf

General Description

The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Key Features

  • VDS = 190V,ID =3A RDS(ON) < 540mΩ @ VGS=10V RDS(ON) < 560mΩ @ VGS=10V (Typ:430mΩ) (Typ:440mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation.
  • RoHS Compliant Schematic Diagram Marking and Pin Assignment.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Global Mixed-mode Technology Logo G2003 10-bit I2C DAC Global Mixed-mode Technology

More Datasheets from GOFORD

Part Number Description
G2002A N-Channel Enhancement Mode Power MOSFET
G2012 N-Channel Enhancement Mode Power MOSFET

G2003A Distributor