G2003A - N-Channel Enhancement Mode Power MOSFET

Product Overview

Part number	G2003A
Manufacturer	GOFORD
File Size	1.23 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G2003A Datasheet
Additional preview pages of the G2003A datasheet.

The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS = 190V,ID =3A RDS(ON) < 540mΩ @ VGS=10V RDS(ON) < 560mΩ @ VGS=10V (Typ:430mΩ) (Typ:440mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.
RoHS Compliant Schematic Diagram Marking and Pin Assignment.

📁 Similar Datasheet

G2003 - 10-bit I2C DAC (Global Mixed-mode Technology)
G200 - Axial Vitreous Leaded Wirewound Resistors (Vishay)
G2000HF250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G2000HF450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G2001 - 6+1CH serial input motor driver IC (Global Mixed-mode Technology)
G2002 - 5+1CH serial input motor driver (Global Mixed-mode Technology)
G2002B - 5+1CH serial input motor driver (Global Mixed-mode Technology)
G2004 - Constant current type 1-CH H-bridge driver IC (Global Mixed-mode Technology)

Other Datasheets by GOFORD

Published: Nov 3, 2024 |