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G2003A - N-Channel Enhancement Mode Power MOSFET

General Description

The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 190V,ID =3A RDS(ON) < 540mΩ @ VGS=10V RDS(ON) < 560mΩ @ VGS=10V (Typ:430mΩ) (Typ:440mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation.
  • RoHS Compliant Schematic Diagram Marking and Pin Assignment.

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Datasheet Details

Part number G2003A
Manufacturer GOFORD
File Size 1.23 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G2003A Datasheet

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GOFORD G2003A Description The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.