GOFORD G2012
The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.| Part No. | G2012 |
|---|---|
| Datasheet | G2012 Download |
| Manufacturer | GOFORD |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications.GENERAL FEATURES
● VDS● ID (at VGS = 10V)
● RDS(ON) (at VGS = 4.5V)
● RDS(ON) (at VGS = 2.5V)
● 100% Avalanche Tested
● RoHS Compliant 20V 12A < 12mΩ < 18mΩ Application
● Power switch
● DC/DC converters Schematic diagram Marking and pin assignment Device G2012 Package DFN2*2-6L Marking G2012 DFN2*2-6L Packaging 3000pcs/Reel
ABSOLUTE MAXIMUM RATINGS
TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Operating Junction and Storage Temperature Range (note1) VDSS ID IDM VGSS PD TJ, Tstg 20 V 12 A 40 A ±10 V 1.5 W -55 To 150 ºC Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient Symbol RthJA Value 83 Unit ºC/W TEL：0755- 29961263 FAX:0755-29961466 GOFORD G2012 Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Static Parameters Drain-Source Breakdown Voltage Zero Gate...
