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G2012 - N-Channel Enhancement Mode Power MOSFET

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G2012 N-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G2012

Datasheet Details

Part number	G2012
Manufacturer	GOFORD
File Size	758.40 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G2012 Datasheet
Additional preview pages of the G2012 datasheet.

Product details

Description

The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
RDS(ON) (at VGS = 2.5V).
100% Avalanche Tested.
RoHS Compliant 20V 12A < 12mΩ < 18mΩ.

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Published: Nov 3, 2024 |