Part G2012
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer GOFORD
Size 758.40 KB
GOFORD
G2012

Overview

The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.

  • ID (at VGS = 10V)
  • RDS(ON) (at VGS = 4.5V)
  • RDS(ON) (at VGS = 2.5V)
  • 100% Avalanche Tested
  • RoHS Compliant 20V 12A < 12mΩ < 18mΩ