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G2012 - N-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • RDS(ON) (at VGS = 2.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant 20V 12A < 12mΩ < 18mΩ.

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Datasheet Details

Part number G2012
Manufacturer GOFORD
File Size 758.40 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G2012 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GOFORD G2012 N-Channel Enhancement Mode Power MOSFET Description The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.5V) ⚫ RDS(ON) (at VGS = 2.