G2012
G2012 is N-Channel Enhancement Mode Power MOSFET manufactured by GOFORD.
GOFORD
N-Channel Enhancement Mode Power MOSFET
Description
The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features
- VDS
- ID (at VGS = 10V)
- RDS(ON) (at VGS = 4.5V)
- RDS(ON) (at VGS = 2.5V)
- 100% Avalanche Tested
- RoHS pliant
20V 12A < 12mΩ < 18mΩ
Application
- Power switch
- DC/DC converters
Schematic diagram Marking and pin assignment
Device G2012
Package DFN2- 2-6L
Marking G2012
DFN2- 2-6L Packaging...
