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G3K8N15KE - N-Channel Enhancement Mode Power MOSFET

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 150V 6A < 370mΩ < 390mΩ l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>2.5KV Schematic diagram.

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Datasheet preview – G3K8N15KE

Datasheet Details

Part number G3K8N15KE
Manufacturer GOFORD
File Size 689.80 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G3K8N15KE Datasheet
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Full PDF Text Transcription

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G3K8N15KE N-Channel Enhancement Mode Power MOSFET Description The G3K8N15KE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 150V 6A < 370mΩ < 390mΩ l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>2.
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