G3K8N15KE
G3K8N15KE is N-Channel Enhancement Mode Power MOSFET manufactured by GOFORD.
N-Channel Enhancement Mode Power MOSFET
Description
The G3K8N15KE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
150V 6A < 370mΩ < 390mΩ l 100% Avalanche Tested l Ro HS pliant l ESD (HBM)>2.5KV
Schematic diagram
Application l Power switch l DC/DC converters
Ordering Information
Device G3K8N15KE
Package TO-252
Marking G3K8N15
TO-252
Packaging...
