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G60N04D52 - Dual N-Channel Enhancement Mode Power MOSFET

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G60N04D52 Dual N-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G60N04D52

Datasheet Details

Part number	G60N04D52
Manufacturer	GOFORD
File Size	827.86 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	G60N04D52 Datasheet
Additional preview pages of the G60N04D52 datasheet.

Product details

Description

The G60N04D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
100% Avalanche Tested.
RoHS Compliant 40V 35A < 9mΩ < 12mΩ.

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Published: Nov 21, 2024 |