G60N04D52
Description
The G60N04D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features
- VDS
- ID (at VGS = 10V)
- RDS(ON) (at VGS = 10V)
- RDS(ON) (at VGS = 4.5V)
- 100% Avalanche Tested
- Ro HS pliant
40V 35A < 9mΩ
< 12mΩ
Application
- Power switch
- DC/DC converters
D1
D2
G1
G2
S1
S2
Schematic diagram
Marking and pin assignment
Device G60N04D52
Package DFN5- 6-8L
Marking G60N04
DFN5- 6-8L Packaging 5000pcs/Reel
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Single pulse avalanche energy Operating Junction and Storage Temperature Range
Thermal Resistance
Parameter Thermal Resistance, Junction-to-Case
(note1) （note3）
VDS ID IDM VGS PD EAS TJ, Tstg
Symbol Rth JC
Value 40 35 140 ±20 20 72
-55 To 150
Value 6
Unit V A A V W m J ºC
Unit...
