Datasheet Details
| Part number | GS120R045Q4 |
|---|---|
| Manufacturer | GOFORD |
| File Size | 1.10 MB |
| Description | N-Channel Silicon Carbide MOSFET |
| Datasheet |
 GS120R045Q4 Datasheet
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General Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon.
In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Key Features
- l High Speed Switching with Low Capacitances Schematic diagram l High Blocking Voltage with Low RDS(on) l Optimized package with separate driver source pin l Easy to parallel and simple to drive l ROHS Compliant, Halogen free RY l.