• Part: GS120R045Q4
  • Description: N-Channel Silicon Carbide MOSFET
  • Manufacturer: GOFORD
  • Size: 1.10 MB
Download GS120R045Q4 Datasheet PDF
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Datasheet Summary

N-Channel Silicon Carbide (SiC) MOSFET Description Silicon Carbide (SiC) MOSFET use a pletely new technology that provide superior switching performance and higher reliability pared to Silicon. In addition, the low ON resistance and pact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size. Features l High Speed Switching with Low Capacitances Schematic diagram l High Blocking Voltage with Low RDS(on) l Optimized package with separate driver source pin l Easy to parallel and simple to drive l ROHS pliant, Halogen...