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GT007N04TL - N-Channel Enhancement Mode Power MOSFET

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 40V 285A < 1.5mΩ < 2.0mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram D.

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Datasheet Details

Part number GT007N04TL
Manufacturer GOFORD
File Size 737.79 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT007N04TL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GT007N04TL N-Channel Enhancement Mode Power MOSFET Description The GT007N04TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 40V 285A < 1.5mΩ < 2.