Datasheet4U Logo Datasheet4U.com

GT090N06D52 - N-Channel Enhancement Mode Power MOSFET

Description

The GT090N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant 60V 40A < 14mΩ < 18mΩ.

📥 Download Datasheet

Datasheet preview – GT090N06D52

Datasheet Details

Part number GT090N06D52
Manufacturer GOFORD
File Size 690.72 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT090N06D52 Datasheet
Additional preview pages of the GT090N06D52 datasheet.

📁 Similar Datasheet

  • GT0001 - 1000 Base CX Transformer Modules (BESTJOB)
  • GT0002 - 1000 Base CX Transformer Modules (BESTJOB)
  • GT02F16 - High Voltage Silicon Rectifier Diode (HVGT)
  • GT04 - Gate Drive Transformer (ice Components)
  • GT04-111 - Gate Drive Transformer (ice Components)
  • GT04-122 - Gate Drive Transformer (ice Components)
Other Datasheets by GOFORD
  • GT090N06 - N-Channel Enhancement Mode Power MOSFET
  • GT090N06K - N-Channel Enhancement Mode Power MOSFET
  • GT007N04 - N-Channel Enhancement Mode Power MOSFET
  • GT007N04TL - N-Channel Enhancement Mode Power MOSFET
  • GT013N04 - N-Channel Enhancement Mode Power MOSFET
  • GT013N04T - N-Channel Enhancement Mode Power MOSFET
  • GT015N06 - N-Channel Enhancement Mode Power MOSFET
  • GT015N06TL - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
GOFORD N-Channel Enhancement Mode Power MOSFET GT090N06D52 Description The GT090N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.
Published: |