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GT090N06D52 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

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Datasheet Details

Part number GT090N06D52
Manufacturer GOFORD
File Size 690.72 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT090N06D52 Datasheet

General Description

The GT090N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

GOFORD N-Channel Enhancement Mode Power MOSFET GT090N06D52.

Key Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant 60V 40A < 14mΩ < 18mΩ.

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