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GT120N10 - MOSFET

Description

The GT120N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDSS @R10DVS(T(OyNp)) ID 100V 3.7mΩ 120A.
  • Excellent gate charge x RDS(on) product.
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • RoHS Compliant.
  • 100% UIS tested.

📥 Download Datasheet

Datasheet preview – GT120N10

Datasheet Details

Part number GT120N10
Manufacturer GOFORD
File Size 2.00 MB
Description MOSFET
Datasheet download datasheet GT120N10 Datasheet
Additional preview pages of the GT120N10 datasheet.

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Full PDF Text Transcription

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GOFORD Description The GT120N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features VDSS @R10DVS(T(OyNp)) ID 100V 3.
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