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GT120N10 Datasheet

Manufacturer: GOFORD
GT120N10 datasheet preview

GT120N10 Details

Part number GT120N10
Datasheet GT120N10 Datasheet PDF (Download)
File Size 2.00 MB
Manufacturer GOFORD
Description MOSFET
GT120N10 page 2 GT120N10 page 3

GT120N10 Overview

The GT120N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

GT120N10 Key Features

  • Excellent gate charge x RDS(on) product
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • RoHS pliant
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous

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