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GT120N10 Datasheet MOSFET

Manufacturer: GOFORD

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General Description

The GT120N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching and synchronous rectification.

Overview

GOFORD.

Key Features

  • VDSS @R10DVS(T(OyNp)) ID 100V 3.7mΩ 120A.
  • Excellent gate charge x RDS(on) product.
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • RoHS Compliant.
  • 100% UIS tested.

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