GT15N10
Description
Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications General Features VDSS RDS(ON) RDS(ON) ID @ 4.5V(Typ) @10V (Typ) 100V 6.6 mΩ 8.9 mΩ 15 A Schematic diagram Marking and pin assignment High power and current handing capability Lead free product is acquired Surface mount package.
