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GT15N10 - MOSFET

General Description

Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications General

Key Features

  • VDSS RDS(ON) RDS(ON) ID @ 4.5V(Typ) @10V (Typ) 100V 6.6 mΩ 8.9 mΩ 15 A Schematic diagram Marking and pin assignment.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number GT15N10
Manufacturer GOFORD
File Size 3.90 MB
Description MOSFET
Datasheet download datasheet GT15N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GOFORD GT15N10 Description · Trench Power MV MOSFET technology · Low RDS(ON) · Low Gate Charge · Optimized for fast-switching applications General Features ● VDSS RDS(ON) RDS(ON) ID @ 4.5V(Typ) @10V (Typ) 100V 6.6 mΩ 8.