GT55N06 Overview
The GT55N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | GT55N06 |
|---|---|
| Datasheet | GT55N06 GT55N06D5 Datasheet (PDF) |
| File Size | 691.20 KB |
| Manufacturer | GOFORD |
| Description | N-Channel Enhancement Mode Power MOSFET |
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The GT55N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Part Number | Description |
|---|---|
| GT55N06D5 | N-Channel Enhancement Mode Power MOSFET |
| GT52N10 | N-Channel Enhancement Mode Power MOSFET |
| GT52N10 | TO-220 N-Channel Enhancement Mode Power MOSFET |
| GT52N10D5 | N-Channel Enhancement Mode Power MOSFET |
| GT52N10T | N-Channel Enhancement Mode Power MOSFET |
| GT58N12 | MOSFET |