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GT55N06 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the GT55N06 datasheet PDF. This datasheet also includes the GT55N06D5 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GT55N06D5-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GT55N06
Manufacturer GOFORD
File Size 691.20 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT55N06 Datasheet

General Description

The GT55N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

GT55N06D5 N-Channel Enhancement Mode Power MOSFET.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avalanche Tested l RoHS Compliant 60V 45A < 9mΩ < 13mΩ Schematic diagram pin assignment.

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