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GT750P10 - P-Channel Enhancement Mode Power MOSFET

Download the GT750P10 datasheet PDF. This datasheet also covers the GT750P10D5 variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -100V -24A < 60mΩ < 75mΩ Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GT750P10D5-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GT750P10
Manufacturer GOFORD
File Size 625.16 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT750P10 Datasheet

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Other Datasheets by GOFORD

Part Number Description
GT750P10D5 P-Channel Enhancement Mode Power MOSFET
GT700P08 P-Channel Enhancement Mode Power MOSFET
GT700P08D3 P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GT750P10D5 P-Channel Enhancement Mode Power MOSFET Description The GT750P10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.