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GT750P10 - P-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the GT750P10, a member of the GT750P10D5 P-Channel Enhancement Mode Power MOSFET family.

Datasheet Summary

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -100V -24A < 60mΩ < 75mΩ Schematic diagram.

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Datasheet preview – GT750P10

Datasheet Details

Part number GT750P10
Manufacturer GOFORD
File Size 625.16 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT750P10 Datasheet
Additional preview pages of the GT750P10 datasheet.

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Other Datasheets by GOFORD
  • GT750P10D5 - P-Channel Enhancement Mode Power MOSFET
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  • GT700P08D3 - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

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GT750P10D5 P-Channel Enhancement Mode Power MOSFET Description The GT750P10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.
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