GOFORD XM2N200
The XM2N200 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | XM2N200 |
|---|---|
| Datasheet | XM2N200 Download |
| Manufacturer | GOFORD |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications.GENERAL FEATURES
● VDSS RDS(ON) ID @ 10V (typ) 190V 356.6mΩ 2A● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
● RoHS Compliant Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply Ordering Information Part Number XM2N200 Marking XM2N200 Case TO-92 XM2N200 D G S Schematic diagram TO-92 Packaging 1000pcs/Carton
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 190 ±20 2 8 3 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 41.7 ℃ /WELECTRICAL CHARACTERISTICS
(TA=25℃unless otherwise noted) Par...
