XM2N200
XM2N200 is N-Channel Power MOSFET manufactured by GOFORD.
Description
The XM2N200 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDSS RDS(ON)
@ 10V (typ)
190V 356.6mΩ 2A
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
- Ro HS pliant
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Ordering Information
Part Number XM2N200
Marking XM2N200
Case TO-92
S Schematic diagram
TO-92 Packaging
1000pcs/Carton
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
190 ±20
2 8 3 -55 To...
