XM2N200 - N-Channel Power MOSFET

General Description

design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDSS RDS(ON) ID @ 10V (typ) 190V 356.6mΩ 2A.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.
RoHS Compliant.

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XM2N200 n-channel power mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	XM2N200
Manufacturer	GOFORD
File Size	2.84 MB
Description	N-Channel Power MOSFET
Datasheet	XM2N200 Datasheet

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GOFORD Description The XM2N200 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDSS RDS(ON) ID @ 10V (typ) 190V 356.