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1N4453 - SILICON EPITAXIAL PLANAR DIODES

Download the 1N4453 datasheet PDF. This datasheet also covers the 1N4453_GOOD variant, as both devices belong to the same silicon epitaxial planar diodes family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM A B C D IM E N S IO N S D IM A B C D in c h e s M in . 0 .6 3 0 M ax. 0 .11 4 0 .0 7 5 0 .0 1 7 M in . 1 6 .0 mm M ax. 2 .9 1 .9 0 .4 2 N o te D in c h e s M in . 1 .0 8 3 M ax. 0 .1 5 4 0 .0 7 5 0 .0 2 0 M in . 2 7 .5 0 mm M ax. 3 .9 1 .9 0 .5 2 N o te Electrical Characteristics Type Peak reverse voltage VRM V 1N914 1N4149 1) Max.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N4453_GOOD-ARKElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N4453
Manufacturer GOOD-ARK Electronics
File Size 23.71 KB
Description SILICON EPITAXIAL PLANAR DIODES
Datasheet download datasheet 1N4453 Datasheet

📁 Similar Datasheet

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1N4450 HIGH SPEED SWITCHING DIODE EIC
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Other Datasheets by GOOD-ARK Electronics

Part Number Description
1N4450 SILICON EPITAXIAL PLANAR DIODES
1N4451 SILICON EPITAXIAL PLANAR DIODES
1N4447 SILICON EPITAXIAL PLANAR DIODES
1N4449 SILICON EPITAXIAL PLANAR DIODES
1N4149 SILICON EPITAXIAL PLANAR DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1N914 THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM A B C D IM E N S IO N S D IM A B C D in c h e s M in . 0 .6 3 0 M ax. 0 .11 4 0 .0 7 5 0 .0 1 7 M in . 1 6 .0 mm M ax. 2 .9 1 .9 0 .4 2 N o te D in c h e s M in . 1 .0 8 3 M ax. 0 .1 5 4 0 .0 7 5 0 .0 2 0 M in . 2 7 .5 0 mm M ax. 3 .9 1 .9 0 .5 2 N o te Electrical Characteristics Type Peak reverse voltage VRM V 1N914 1N4149 1) Max. aver. rectified current IO mA 75 150 200 150 150 150 2) Max. power dissip. at 25 Ptot mW 500 500 500 400 400 500 500 500 400 400 400 400 Max. junction temperature Tj 200 200 200 175 175 200 200 200 175 175 175 175 Max.