2N2222A Datasheet | Good-Ark Semiconductor

DESCRIPTION The 2N2222A is silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. It is designed for high speed switching application at collector current up to 500m A, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. 2N2222A NPN Transistor ABSOLUTE MAXIMUM RATINGS Parameter Collector-Base Votlage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage(IC=0) Collector Current Total Dissipation at TA≤25℃ at TC≤25℃ Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Operating Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Rthja Rthjc TJ TSTG Rating 75 40 6 800 1.8 300 83.3 175 -65 ~ 200 ELECTRICAL CHARACTERISTICS(TC = 25 °C unless otherwise noted) Parameter Symbol Test Condition. Collector Cut-off Current (IE=0) VCB=60V ICBO VCB=60V, TC=150°C Collector Cut-off Current (VBE=-3V) ICEX VCE=60V Base Cut-off Current(VBE=-3V) IBEX...