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Main Product Characteristics:
VDSS
-30 V
RDS(on) 10.6 mΩ(typ.)
ID -12A
Features and Benefits:
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
GDSSF3611E
Marking and pin Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
GDSSF3611E Datasheet
