MMDT3904 Overview
Features Epitaxial planar die construction Ideal for low power amplification and switching MMDT3904 Dual NPN Transistor Ratings (TA = 25 °C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol VCBO.
MMDT3904 Key Features
- Epitaxial planar die construction
- Ideal for low power amplification and switching
