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SSF11NS60 Datasheet 600v N-channel MOSFET

Manufacturer: GOOD-ARK

Overview: Main Product Characteristics VDSS RDS(on) ID 600V 0.36Ω (typ.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The SSF11NS60 series MOSFET is a new technology, which bines an innovative super junction technology and advance process.

This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving.

Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=22.5mH Avalanche Current @ L=22.5mH Operating Junction and Storage Temperature Range Max.

Key Features

  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Lead free product TO-220 SSF11NS60 600V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram.

SSF11NS60 Distributor