SSF2616E - Dual N-Channel MOSFET

GOOD-ARK

Download the SSF2616E datasheet PDF. This datasheet also covers the SSF2616E-GOOD variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Key Features

VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating：2000V HBM.
High Power and current handing capability.
Lead free product.
Surface Mount Package Schematic Diagram Marking and Pin Assignment.

📥 Download Datasheet

SSF2616E dual n-channel mosfet by GOOD-ARK - Datasheet Preview — Note: The manufacturer provides a single datasheet file (SSF2616E-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	SSF2616E
Manufacturer	GOOD-ARK
File Size	716.70 KB
Description	Dual N-Channel MOSFET
Datasheet	SSF2616E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. SSF2616E 20V Dual N-Channel MOSFET GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.