Datasheet Summary
Main Product Characteristics
VDSS
-30V
RDS(on) 45mohm(typ.)
ID -4A Features and Benefits:
SOT23-6
- Advanced trench MOSFET process technology
- Special designed for buttery protection, load switching and general power management
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150℃ operating temperature
- Lead free product
30V P-Channel MOSFET
3051G7
Marking and Pin Assignment
S Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely...