SSF3051G7 Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
SSF3051G7 Key Features
- Advanced trench MOSFET process technology
- Special designed for buttery protection, load
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150℃ operating temperature
- Lead free product
SSF3051G7 Applications
- 30 ±25 -4 -25 1.7 -55 To 150