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SSF3612E Datasheet N-channel MOSFET

Manufacturer: Good-Ark Semiconductor

Overview: DESCRIPTION The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its mon-drain configuration.

Key Features

  • VDS = 25V,ID = 11A RDS(ON) < 20mΩ @ VGS=4.0V RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=10V.
  • High Power and current handling capability.
  • Lead free product.
  • Surface Mount Package SSF3612E 25V N-Channel MOSFET Schematic Diagram Marking and Pin Assignment.

SSF3612E Distributor